Phase-locked operation of a three-element InGaAsP/InP grating-surface-emitting diode laser array
- 3 April 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (14) , 1296-1298
- https://doi.org/10.1063/1.100698
Abstract
Phased-locked operation of a three-element linear grating-surface-emitting laser diode array in the InGaAsP/InP material system is demonstrated. Far-field patterns and spectra indicate coherence across the length of the array and dynamic wavelength stability due to grating feedback.Keywords
This publication has 11 references indexed in Scilit:
- Coherent, monolithic two-dimensional (10×10) laser arrays using grating surface emissionApplied Physics Letters, 1988
- High-performance InGaAsP/InP buried-heterostructure lasers and arrays defined by ion-beam-assisted etchingApplied Physics Letters, 1988
- Yield dependency on length of AlGaAs/GaAs second-order distributed feedback lasers with cleaved facetsApplied Physics Letters, 1987
- Measurement of the coherence of a single-mode phase-locked diode laser arrayApplied Physics Letters, 1987
- Edge- and surface-emitting distributed Bragg reflector laser with multiquantum well active/passive waveguidesApplied Physics Letters, 1987
- Surface-emitting second order distributed Bragg reflector laser with dynamic wavelength stabilization and far-field angle of 0.25°Applied Physics Letters, 1986
- InGaAsP ridge waveguide laser array with nonuniform spacingApplied Physics Letters, 1986
- Highly collimated broadside emission from room-temperature GaAs distributed Bragg reflector lasersApplied Physics Letters, 1977
- Grating-coupled double-heterostructure AlGaAs diode lasersIEEE Journal of Quantum Electronics, 1975
- Single-heterostructure distributed-feedback GaAs-diode lasersIEEE Journal of Quantum Electronics, 1975