High-performance InGaAsP/InP buried-heterostructure lasers and arrays defined by ion-beam-assisted etching
- 2 May 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (18) , 1464-1466
- https://doi.org/10.1063/1.99099
Abstract
Ion-beam-assisted etching has been used to fabricate mass-transported InGaAsP/InP buried- heterostructure lasers. These lasers have a novel, deeply etched rectangular mesa that results in reduced current leakage. Both single-stripe lasers and Y-junction-coupled multiple-stripe laser arrays have been demonstrated. The single-stripe lasers have 12 mA cw threshold currents, differential quantum efficiencies of 32%–34% per facet, and smooth single-lobe far-field patterns. The multiple-stripe arrays lase in-phase with strong phase coherence.Keywords
This publication has 16 references indexed in Scilit:
- Lateral Far-Field Interference Pattern of Buried Heterostructure LasersJapanese Journal of Applied Physics, 1987
- GaAs/AlGaAs ridge waveguide laser monolithically integrated with a photodetector using ion beam etchingElectronics Letters, 1987
- Y-Junction semiconductor laser arrays: Part II--ExperimentsIEEE Journal of Quantum Electronics, 1987
- Channel reallocatable onboard baseband switchElectronics Letters, 1987
- Low-threshold GaAs/GaAlAs buried heterostructure laser with an ion-beam-etched quarter ring cavityElectronics Letters, 1987
- Low threshold ridge waveguide single quantum well laser processed by chemically assisted ion beam etchingIEEE Journal of Quantum Electronics, 1987
- Prevention of current leakage in mass-transported GaInAsP/InP buried-heterostructure lasers with narrow transported regionsIEEE Journal of Quantum Electronics, 1987
- V-groove distributed feedback laser for 1.3–1.55 μm operationApplied Physics Letters, 1986
- Low power ion-beam-assisted etching of indium phosphideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Ar ion-beam etching characteristics and damage production in InPJournal of Physics D: Applied Physics, 1984