Ar ion-beam etching characteristics and damage production in InP
- 14 December 1984
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 17 (12) , 2429-2437
- https://doi.org/10.1088/0022-3727/17/12/011
Abstract
Sputtering yield characteristics of Ar ion-beam etching on InP have been determined. Damage generated by ion-beam bombardment has also been investigated by using scanning electron microscopy, photoluminescence and Auger electron spectroscopy. A two-dimensionally non-uniform surface structure which consists, in the depth direction, of a non-stoichiometric surface layer followed by a region involving nonradiative recombination centres, has been revealed from these measurements.Keywords
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