Prevention of current leakage in mass-transported GaInAsP/InP buried-heterostructure lasers with narrow transported regions
- 1 March 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 23 (3) , 313-319
- https://doi.org/10.1109/jqe.1987.1073345
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Small-Signal Modulation Of P-Substrate Mass-Transported Gainasp/Inp LasersPublished by SPIE-Intl Soc Optical Eng ,1987
- Monolithic two-dimensional arrays of high-power GaInAsP/InP surface-emitting diode lasersApplied Physics Letters, 1986
- Millimetre-wave response of InGaAsP lasersElectronics Letters, 1985
- 1.54-μm phase-adjusted InGaAsP/InP distributed feedback lasers with mass-transported windowsApplied Physics Letters, 1985
- 1.55-μm InGaAsP distributed feedback vapor phase transported buried heterostructure lasersApplied Physics Letters, 1985
- 15 GHz direct modulation bandwidth of vapour-phase regrown 1.3 μm InGaAsP buried-heterostructure lasers under CW operation at room temperatureElectronics Letters, 1985
- A novel GaInAsP/InP distributed feedback laserApplied Physics Letters, 1985
- Surface-emitting GaInAsP/InP laser with low threshold current and high efficiencyApplied Physics Letters, 1985
- Low-threshold high-speed 1.55 μm vapour phase transported buried heterostructure lasers (VPTBH)Electronics Letters, 1984
- Selective low-temperature mass transport in InGaAsP/InP lasersApplied Physics Letters, 1983