Selective low-temperature mass transport in InGaAsP/InP lasers
- 1 September 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (5) , 403-405
- https://doi.org/10.1063/1.94395
Abstract
A low-temperature mass transport process in InP was investigated. Mass transport of InP was achieved at 570–600 °C in a closed ampoule using iodine or InI as a catalytic transporting agent. Accomplishing the mass transport process at lower temperature has eliminated the problem of thermal etching and resulted in lasers with higher T0.Keywords
This publication has 4 references indexed in Scilit:
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- Low threshold InGaAsP terrace mass transport laser on semi-insulating substrateApplied Physics Letters, 1982
- A novel technique for GaInAsP/InP buried heterostructure laser fabricationApplied Physics Letters, 1982