Surface-emitting GaInAsP/InP laser with low threshold current and high efficiency
- 15 January 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (2) , 115-117
- https://doi.org/10.1063/1.95704
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Room-temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laserApplied Physics Letters, 1984
- Fabrication, characterization, and analysis of mass-transported GaInAsP/InP buried-heterostructure lasersIEEE Journal of Quantum Electronics, 1984
- Low threshold GaInAsP/InP buried-heterostructure lasers with a chemically etched and mass-transported mirrorApplied Physics Letters, 1984
- On the Formation of Planar‐Etched Facets in GaInAsP / InP Double HeterostructuresJournal of the Electrochemical Society, 1983
- Lasing characteristics of improved GaInAsP/InP surface emitting injection lasersElectronics Letters, 1983
- New 1.5 μm wavelength GaInAsp/InP distributed feedback laserElectronics Letters, 1982
- A novel technique for GaInAsP/InP buried heterostructure laser fabricationApplied Physics Letters, 1982
- Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasersJournal of Applied Physics, 1980
- High-output power InGaAsP (λ=1.3 μm) strip-buried heterostructure lasersApplied Physics Letters, 1980
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µmJapanese Journal of Applied Physics, 1979