Geminate recombination in a-Si:H
- 15 February 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (4) , 277-279
- https://doi.org/10.1063/1.92305
Abstract
Combined xerographic measurements and a delayed‐collection field technique have been applied to a‐Si:H. to determine whether geminate recombination controls the photogeneration process in a‐Si:H. The delayed‐collection field method allows the photogeneration efficiency at low applied fields to be measured. The results show that, depending on sample preparation, the zero‐field quantum efficiency ranges from 0.44 to 0.55. The measured field dependence of the quantum efficiency give best fits to the Onsager theory with r0 ∼45 to 80 Å for Φ0=1.Keywords
This publication has 13 references indexed in Scilit:
- On the computation of Onsager quantum efficiencyThe Journal of Chemical Physics, 1981
- Nongeminate Recombination of-Si: HPhysical Review Letters, 1980
- Theory of radiative recombination by diffusion and tunnelling in amorphous Si:HJournal of Non-Crystalline Solids, 1980
- Hole photogeneration in binary solid solutions of triphenylamine and bisphenol-A-polycarbonateThe Journal of Chemical Physics, 1978
- Photoluminescence in amorphous siliconPhysica Status Solidi (b), 1977
- Carrier recombination in orthorhombic sulphurJournal of Physics and Chemistry of Solids, 1975
- Onsager mechanism of photogeneration in amorphous seleniumPhysical Review B, 1975
- Photogeneration of charge carriers in amorphous seleniumJournal of Physics and Chemistry of Solids, 1974
- Photoconductivity and absorption in amorphous SiJournal of Non-Crystalline Solids, 1973
- Initial Recombination of IonsPhysical Review B, 1938