Microhardness of tetrahedrally bonded semiconductors
- 1 June 1977
- journal article
- other
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 35 (6) , 1681-1684
- https://doi.org/10.1080/14786437708232989
Abstract
An empirical bond-approach is presented which, by using simple atomic and bonding parameters, namely the valence of component atoms, melting point and crystal ionicity, allows accurate predictions for the microhardness of ANBB-N tetrahedrally coordinated semiconductors.Keywords
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