Molecular Beam Epitaxy of In-Doped CdTe
- 1 April 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (4R)
- https://doi.org/10.1143/jjap.21.665
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Molecular beam epitaxy of II–VI compounds: CdTeJournal of Crystal Growth, 1981
- Recent European developments in MBEJournal of Vacuum Science and Technology, 1981
- RHEED Study of InSb Films Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1980
- Photoluminescence in high-resistivity CdTe : InJournal of Applied Physics, 1975
- Etching Behavior of the {110} and {100} Surfaces of InSbJournal of the Electrochemical Society, 1960