Effect of vacancies on electrical and optical properties of amorphous gallium arsenide films
- 1 October 1974
- journal article
- other
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 16 (1) , 143-147
- https://doi.org/10.1016/0022-3093(74)90076-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Model for the effect of voids on the optical and electrical properties of amorphous siliconSolid State Communications, 1973
- Annealing Activation Energies of Sputtered Ge FilmsJournal of the Electrochemical Society, 1973
- Influence of annealing on the optical properties of amorphous germanium filmsMaterials Research Bulletin, 1971
- EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAsApplied Physics Letters, 1970
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970
- Electrons in disordered structuresAdvances in Physics, 1967
- Structural and Optical Characteristics of Thin GaAs FilmsJournal of Applied Physics, 1964