Electrical and metallurgical investigations of the metallization system: Si/PtSi/V/Al
- 1 September 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (5) , 1753-1757
- https://doi.org/10.1063/1.337775
Abstract
Schottky-barrier diodes have been fabricated by evaporation of Pt on Si substrates followed by annealing at 500 °C to yield PtSi. Then V and Al were evaporated. The amount of oxygen intentionally incorporated in the V film during deposition was varied and the resulting effect on the diffusion barrier action of the vanadium film has been studied by I-V and C-V measurements of the diodes and by backscattering spectrometry of simultaneously prepared test samples. It is found that for V films with low oxygen concentrations annealing in the range 400–600 °C leads to the formation of VAl3 and subsequent barrier height change. For vanadium films containing 50-at. % oxygen there is no observable reaction between V and Al and the barrier height is preserved for annealing between 400 and 600 °C.This publication has 24 references indexed in Scilit:
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