Abstract
In, Zn and H have been doped into the CdS layer of sintered CdS/Cu2S solar cells, resulting in considerable improvement in short-circuit current, open-circuit voltage, and degradation performance. The effects of vacuum annealing and sintering at reduced pressure are also reported. It appears that the impurity doping reduces the effective space charge density at the interfacial region in the grain boundaries, thereby decreasing the saturation current density and the diode exponential factor of the cells. Of all the impurities tested, hydrogen has proved to be the most beneficial.