Thermally generated paramagnetism in amorphous arsenic
- 31 October 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 28 (3) , 247-250
- https://doi.org/10.1016/0038-1098(78)90636-1
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Paramagnetic states induced in amorphous As, Se, andby electron bombardment at 77 KPhysical Review B, 1978
- Temperature dependence of the density of optically-induced localized paramagnetic states in glassy As2Se3Philosophical Magazine Part B, 1978
- Optical and electrical properties of amorphous arsenicSolid State Communications, 1977
- Optically induced localized paramagnetic states in amorphous AsSolid State Communications, 1976
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- Optically Induced Localized Paramagnetic States in Amorphous SemiconductorsPhysical Review Letters, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- Localized states in amorphous arsenicSolid State Communications, 1975