Lithographic properties of amorphous WO3 films exposed to photons, electrons, and hydrogen plasma

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Abstract
Lithographic properties of amorphous WO3 films exposed to photons, electrons, and glow‐discharge hydrogen plasma have been investigated. It has been observed that the etching rates of the films in an alkaline solution are lower compared to the unexposed ones, giving rise to a negative tone behavior of the material. The etching characteristics as a function of exposure time and their correlation with the optical transmission have been studied. The contrast (γ) values obtained are 2.3 for photons, 4.0 for electrons, and 2.7 for hydrogen plasma. The sensitivity (S) values obtained are∼1021 photons /cm2 for photons and 10−3 C/cm2 for electrons.