Photoluminescence line shape due to arrayed steps at the interfaces of GaAs/AlGaAs single quantum wells grown on vicinal surfaces by molecular beam epitaxy
- 1 January 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 41-42, 526-529
- https://doi.org/10.1016/0169-4332(89)90115-3
Abstract
No abstract availableKeywords
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