Variations in trimethylindium partial pressure measured by an ultrasonic cell on an MOVPE reactor
- 1 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (2) , 481-487
- https://doi.org/10.1016/0022-0248(89)90025-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A study of residual background doping in high purity indium phosphide grown by atmospheric pressure OMVPEJournal of Crystal Growth, 1987
- MO-CVD growth of InGaAs using Me3Ga, AsMe3, AsH3 and Me3In or Et3In and analyses of adducts formed during the growth processProgress in Crystal Growth and Characterization, 1986
- Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressureJournal of Electronic Materials, 1984