Analysis and optimization of the planar 6H-SiC ACCUFET
- 5 January 1999
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 43 (2) , 213-220
- https://doi.org/10.1016/s0038-1101(98)00244-5
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- SiC Integrated MOSFETsPhysica Status Solidi (a), 1997
- High-voltage double-implanted power MOSFET's in 6H-SiCIEEE Electron Device Letters, 1997
- Improved oxidation procedures for reduced SiO2/SiC defectsJournal of Electronic Materials, 1996
- Effect of substrate orientation and crystal anisotropy on the thermally oxidized SiO2/SiC interfaceJournal of Applied Physics, 1996
- Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet StructuresMRS Proceedings, 1996
- Planar, ion implanted, high voltage 6H-SiC P-N junction diodesIEEE Electron Device Letters, 1995
- Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiCIEEE Transactions on Electron Devices, 1994
- SiC devices: physics and numerical simulationIEEE Transactions on Electron Devices, 1994
- Conductivity Anisotropy in Epitaxial 6H and 4H SicMRS Proceedings, 1994
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993