Luminescence properties of GaN and Al0.14Ga0.86N/GaN superlattice doped with europium
- 7 August 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (6) , 767-769
- https://doi.org/10.1063/1.1306645
Abstract
We report the observation of visible photoluminescence and cathodoluminescence of Eu 3+ ions implanted in GaN and Al 0.14 Ga 0.86 N/GaN superlattice. The sharp characteristic emission lines corresponding to Eu 3+ intra- 4f 6 -shell transitions are resolved and observed over the temperature range of 7–330 K. The luminescence shows dominant transitions 5 D 0 → 7 F 1,2,3 and weaker 5 D 0 → 7 F 4,5,6 and 5 D 1 → 7 F 1 . The luminescence emission is very weakly temperature dependent. The intensity of Eu 3+ emission from Al 0.14 Ga 0.86 N/GaN superlatticeannealed in N 2 is ∼58% stronger than from Eu 3+ in the GaN layer. The Al 0.14 Ga 0.86 N/GaN superlattice and GaN epilayers may be suitable as a material for visible optoelectronic devices.Keywords
This publication has 8 references indexed in Scilit:
- Photoluminescence and cathodoluminescence of GaN doped with PrJournal of Applied Physics, 2000
- Photoluminescence and cathodoluminescence of GaN doped with TbApplied Physics Letters, 2000
- Visible cathodoluminescence of Er-doped amorphous AlN thin filmsApplied Physics Letters, 1999
- Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substratesApplied Physics Letters, 1999
- Cathodoluminescence of GaN doped with Sm and HoSolid State Communications, 1999
- Visible cathodoluminescence of GaN doped with Dy, Er, and TmApplied Physics Letters, 1999
- Kinetics of luminescence of isoelectronic rare-earth ions in III-V semiconductorsPhysical Review B, 1993
- Polarized Spectra and Crystal-Field Parameters ofin YVPhysical Review B, 1967