Growth-promoting dissociated dislocations in solution-grown silicon
- 1 July 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 81 (3) , L101-L104
- https://doi.org/10.1016/0040-6090(81)90492-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Analysis of dislocations creating monomolecular growth stepsJournal of Crystal Growth, 1981
- “Edge” dislocations as crystal growth sourcesJournal of Crystal Growth, 1981
- A new preparation method for large area electron-transparent silicon samplesJournal of Physics E: Scientific Instruments, 1975