Effects of quantization on the electrical characteristics of deep submicron p- and n-MOSFETs

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23 December 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/vlsit.1996.507824

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETs
IEEE Transactions on Electron Devices, 1992
Measurements of bandgap narrowing in Si bipolar transistors
Solid-State Electronics, 1976
Self-Consistent Results for $n$ -Type Si Inversion Layers
Physical Review B, 1972