Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETs
- 1 April 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (4) , 932-938
- https://doi.org/10.1109/16.127485
Abstract
No abstract availableKeywords
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