Semiconductor device modelling from the numerical point of view

This publication has 62 references indexed in Scilit:

• A Nonlinear Eigenvalue Problem Modelling the Avalanche Effect in Semiconductor Diodes
  SIAM Journal on Mathematical Analysis, 1985
• Convergence properties of Newton's method for the solution of the semiconductor transport equations and hybrid solution techniques for multidimensional simulation of VLSI devices
  Solid-State Electronics, 1984
• Global approximate Newton methods
  Numerische Mathematik, 1981
• Steady state solutions of diffusion-reaction systems with electrostatic convection
  Nonlinear Analysis, 1980
• Calculation of Two-Dimensional Potential Cascade Flow Using Finite Area Methods
  AIAA Journal, 1980
• The numerical solution of poisson's equation for two-dimensional semiconductor devices
  Solid-State Electronics, 1976
• An Initial Value Problem from Semiconductor Device Theory
  SIAM Journal on Mathematical Analysis, 1974
• A two-dimensional mathematical model of the insulated-gate field-effect transistor
  Solid-State Electronics, 1973
• Differencing scheme for a differential equation with a small parameter affecting the highest derivative
  Mathematical Notes, 1969
• An accurate numerical steady-state one-dimensional solution of the P-N junction
  Solid-State Electronics, 1968