Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling
- 11 September 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (11) , 1088-1090
- https://doi.org/10.1063/1.101713
Abstract
The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.Keywords
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