Minority-carrier lifetime in ITO/InP heterojunctions

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Abstract
The relationship between photoluminescence lifetime and minority-carrier lifetime is derived for window/absorber heterojunctions by the method of Laplace transforms. The model includes the effects of diffusion to the depletion region and self-absorption of the emitted radiation. The model is applied to InP photoluminescence generated by pulsed laser excitation of indium-tin-oxide (ITO)/InP heterojunctions. The photoluminescence lifetime of a device with NA=1×1016 cm−3 is about 21 ns. The bulk lifetime of the device can be fit with a lifetime of about 30 ns. The lifetime in the unprocessed substrate exceeds 200 ns indicating that recombination is induced by ITO processing.