Optical gain in porous silicon grains embedded in sol-gel derived SiO2 matrix under femtosecond excitation

Porous silicon grains embedded in the phosphorus doped ${\mathrm{SiO}}_2$ matrix exhibit improved photoluminesce properties and better stability in comparison with native porous silicon samples. We have tested this material for the presence of room temperature optical amplification under femtosecond (100 fs, 395 nm) excitation. Combined variable stripe length and shifted excitation spot experiments reveal positive optical gain, the net modal gain coefficient reaching 25 ${\mathrm{cm}}^{\text{−1}}$ at a pump intensity of 1.1 ${\mathrm{W/cm}}^2$ (mean power). The gain spectrum is broad (full width at half maximum ∼130 nm), peaked at ∼650 nm, and is slightly blueshifted with regard to the standard photoluminescence emission.