An improved self aligned silicide process for VLSI
- 31 August 1989
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 20 (4) , 11-17
- https://doi.org/10.1016/0026-2692(89)90072-4
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Study of reaction kinetics for titanium disilicide formation by evaporated titanium on siliconMicroelectronics Journal, 1989