Study of reaction kinetics for titanium disilicide formation by evaporated titanium on silicon
- 1 May 1989
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 20 (3) , 27-37
- https://doi.org/10.1016/0026-2692(89)90006-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Air bridge and via hole technology for GaAs based microwave devicesMicroelectronics Journal, 1988
- Influence of grain size on the transformation temperature of C49 TiSi2 to C54 TiSi2Journal of Applied Physics, 1987
- The development of a fully implanted 3 micron poly-gate NMOS technology — (Part 1)Microelectronics Journal, 1987
- Refractory silicides of titanium and tantalum for low-resistivity gates and interconnectsIEEE Transactions on Electron Devices, 1980