The development of a fully implanted 3 micron poly-gate NMOS technology — (Part 1)
- 28 February 1987
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 18 (1) , 29-33
- https://doi.org/10.1016/s0026-2692(87)80362-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Device Design Considerations for Ion Implanted n-Channel MOSFETsIBM Journal of Research and Development, 1975
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- Electrical characteristics of boron-implanted n-channel MOS transistorsSolid-State Electronics, 1974
- Threshold voltage and ``gain'' term β of ion-implanted enhancement-mode n-channel MOS transistorsApplied Physics Letters, 1973
- Threshold shift calculations for ion implanted MOS devicesSolid-State Electronics, 1972