Electrical characteristics of boron-implanted n-channel MOS transistors
- 30 June 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (6) , 621-626
- https://doi.org/10.1016/0038-1101(74)90183-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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