Influence of grain size on the transformation temperature of C49 TiSi2 to C54 TiSi2
- 15 April 1987
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (8) , 3116-3118
- https://doi.org/10.1063/1.337815
Abstract
Titanium disilicide exists in two possible crystallographic structures: the C49 (ZrSi2) structure and the C54 structure. At low annealing temperatures (400–650 °C), the C49 TiSi2 phase is formed. It transforms to the C54 phase at annealing temperatures between 650–800 °C. The transformation temperature (Ttr), however, appears to be influenced by the microstructure of the C49 phase. This is concluded from the observed difference in Ttr for TiSi2 thin films with varying average grain sizes.This publication has 4 references indexed in Scilit:
- Nucleation and growth of titanium silicide studied by i n s i t u annealing in a transmission electron microscopeJournal of Applied Physics, 1987
- Material reaction and silicide formation at the refractory metal/silicon interfaceApplied Physics Letters, 1986
- Metastable phase formation in titanium-silicon thin filmsJournal of Applied Physics, 1985
- First Phase Nucleation And Growth Of Titanium Disilicide With An iPhasis On The Influence Of OxygenMRS Proceedings, 1985