Material reaction and silicide formation at the refractory metal/silicon interface
- 9 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (23) , 1600-1602
- https://doi.org/10.1063/1.96829
Abstract
Medium energy ion scattering studies show that material reactions other than interfacial silicide formation dominate the low‐temperature reactivity of the Ti/Si interface. This provides an explanation for the anomalous kinetics and considerable extent (100 Å or more) of reaction of refractory metals with Si, which are observed well below the temperatures normally associated with silicide growth in thicker films.Keywords
This publication has 10 references indexed in Scilit:
- NiSi mixing: A new model for low temperature silicide formationSurface Science, 1985
- Ti-Si mixing at room temperature: A high resolution ion backscattering studySurface Science, 1985
- Chemical and structural aspects of reaction at the Ti/Si interfacePhysical Review B, 1984
- Chemical reaction and silicide formation at the Pt/Si interfaceJournal of Vacuum Science & Technology A, 1984
- Chemical reaction and Schottky-barrier formation at V/Si interfacesPhysical Review B, 1984
- Microscopic properties and behavior of silicide interfacesSurface Science, 1983
- Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperatureSurface Science, 1983
- Ion beam crystallography of metal-silicon interfaces: Pd-Si(111)Thin Solid Films, 1982
- Thin film interaction between titanium and polycrystalline siliconJournal of Applied Physics, 1980
- Solid state reactions in titanium thin films on siliconThin Solid Films, 1976