Nonlinear absorption and refraction in strained InGaAs/InP multiple quantum wells for all-optical switching
- 1 April 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (4) , 552-555
- https://doi.org/10.1088/0268-1242/7/4/019
Abstract
Absorption spectra of strained InGaAs/InP quantum wells exhibit a single, unusually large exciton feature. 60% quenching is obtained for 4.3 mW Nd:YAG effective pump power at a wavelength of 1.064 mu m. A simple two-level formula fits well the behaviour at the exciton peak, and absorption spectra are reasonably approximated by a standard two-dimensional exciton model. Saturation intensities calculated with these techniques range around 200 W cm-2. Finally the Kramers-Kronig relations are used to calculate the associated refractive index change.Keywords
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