Improvement of the breakdown field of SIMOX buried oxide layers
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A high-quality SIMOX wafer with an extremely low dislocation density, less than 300 cm/sup -2/ has been formed at low doses of between 3.0 x 10/sup 17/ and 5.0 x 10/sup 17/ cm/sup -2/. This wafer should open the way to practical fabrication of SIMOX ULSIs. The buried oxide layer of this wafer, however, has a relatively low breakdown electric field strength of around 4 MV/cm. The authors clarify the cause of this low breakdown field and propose a method for improving it.<>Keywords
This publication has 2 references indexed in Scilit:
- Analysis of buried oxide layer formation and mechanism of threading dislocation generation in the substoichiometric oxygen dose regionJournal of Materials Research, 1993
- Practical reduction of dislocation density in SIMOX wafersElectronics Letters, 1990