Magnetic-field-induced multiphonon resonant Raman scattering in GaAs
- 13 November 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (20) , 2288-2290
- https://doi.org/10.1103/physrevlett.63.2288
Abstract
We demonstrate that the presence of a magnetic field H leads to an enhancement of multiphonon resonant Raman scattering in GaAs. Sharp lines at up to 7 times the LO-phonon Raman shift are observed. The Raman efficiency of multiphonon peaks shows resonant behavior as a function of H. From this an identification of the Landau levels which participate in the observed resonances is possible. Intraband and intralevel Fröhlich electron-phonon interaction is found to mediate the higher-order Raman processes.Keywords
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