64% efficiency enhancement-mode power heterojunction FET for 3.5 V Li-ion battery operated personal digital cellular phones
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (0149645X) , 439-442
- https://doi.org/10.1109/mwsym.1998.705027
Abstract
This paper describes 950 MHz power performance of an enhancement-mode double-doped AlGaAs/InGaAs/AlGaAs heterojunction FET operated at 3.5 V for personal digital cellular phones. The developed 0.5 /spl mu/m gate length FET exhibited an on-resistance of 1.5 /spl Omega/.mm and a threshold voltage of +0.09 V. Under single 3.5 V operation, a 19.2 mm gate width FET exhibited an output power of 1.03 W (30.1 dBm) and a power-added efficiency of 64.0% with an adjacent channel leakage power of -48.7 dBc at 50 kHz off-center frequency.Keywords
This publication has 2 references indexed in Scilit:
- 7 mm gate width power heterojunction FETs for Li-ion battery operated personal digital cellular phonesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 2.2 V Operation power heterojunction FETfor personal digital cellular telephonesElectronics Letters, 1995