Quantitative analysis of the effects of steady-state illumination on the MOS-capacitor—I: Theory

This publication has 12 references indexed in Scilit:

• Quantitative analysis of the effects of steady-state illumination on the MOS-capacitor—II: Experimental results
  Solid-State Electronics, 1970
• A bibliography of metal-insulator-semiconductor studies
  IEEE Transactions on Electron Devices, 1967
• Influence of illumination on MIS capacitances in the strong inversion region
  IEEE Transactions on Electron Devices, 1967
• The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centers
  Proceedings of the IEEE, 1967
• Equivalent circuit of a metal-insulator-semiconductor structure
  Solid-State Electronics, 1967
• Physical limitations on the frequency response of a semiconductor surface inversion layer
  Solid-State Electronics, 1965
• Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
  Solid-State Electronics, 1965
• Simple Physical Model for the Space-Charge Capacitance of Metal-Oxide-Semiconductor Structures
  Journal of Applied Physics, 1964
• Impedance of semiconductor-insulator-metal capacitors
  Solid-State Electronics, 1964
• Statistics of the Recombinations of Holes and Electrons
  Physical Review B, 1952