Equivalent circuit of a metal-insulator-semiconductor structure
- 31 January 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (1) , 9-20
- https://doi.org/10.1016/0038-1101(67)90108-6
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Field effect studies of the oxidized silicon surfaceSolid-State Electronics, 1966
- Limitations of the MOS capacitance method for the determination of semiconductor surface propertiesIEEE Transactions on Electron Devices, 1965
- Physical limitations on the frequency response of a semiconductor surface inversion layerSolid-State Electronics, 1965
- Impedance of a semiconductor surface at flat band conditionIEEE Transactions on Electron Devices, 1965
- Impedance of semiconductor-insulator-metal capacitorsSolid-State Electronics, 1964
- Field Effect‐Capacitance Analysis of Surface States on SiliconPhysica Status Solidi (b), 1963
- Variation with frequency of the transverse impedance of semiconductor surface layersJournal of Physics and Chemistry of Solids, 1962
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962
- Field Effect at High Frequency†Journal of Electronics and Control, 1959
- High-Frequency Relaxation Processes in the Field-Effect ExperimentPhysical Review B, 1957