Growth characteristics of silicon dioxide produced by rapid thermal oxidation processes
- 27 August 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (9) , 881-883
- https://doi.org/10.1063/1.104265
Abstract
Silicon dioxide growth curves produced by a rapid thermal processor were analyzed. No break point was observed in the growth curves. Of the kinematical models being compared, the linear-parabolic equation gave the best fit. However, the coefficients of the equation are thickness dependent as in the case of diffusion furnace oxide growth data. The correlation in the growth curves indicated similar oxide growth kinematics for the two types of oxidation equipment. Under certain oxidation conditions, the coefficient of the linear term may have a negative value and appears to be determined by the oxidation temperature and oxygen flow rate.Keywords
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