A Study of Defect Formation Mechanism at Edges of Local Oxidation of Silicon Structure
- 1 September 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (9A) , L1198
- https://doi.org/10.1143/jjap.33.l1198
Abstract
We have investigated the effect of the oxygen concentration of the substrate upon defect formation at edges of the local oxidation of silicon (LOCOS) structure by preparing various kinds of substrate. It was found that the defect density was not correlated with oxygen concentration near the LOCOS-fabricated region and that no LOCOS defect was found when bulk defects were induced. The most probable model for the defect formation is proposed to be the combination of maximized tensile stress at LOCOS edges and agglomeration of ejected self-interstitials due to this stress, which is greatly affected by the existence of other strong sink sites such as bulk defects.Keywords
This publication has 10 references indexed in Scilit:
- Micro-Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopyJournal of Applied Physics, 1992
- Local‐Oxidation‐Induced Stress Measured by Raman Microprobe SpectroscopyJournal of the Electrochemical Society, 1990
- On the influence of point defects in the LOCOS processPhysica Status Solidi (a), 1987
- Point defects, diffusion processes, and swirl defect formation in siliconApplied Physics A, 1985
- Stress in silicon at Si3N4/SiO2 film edges and viscoelastic behavior of SiO2 filmsJournal of Applied Physics, 1985
- Evaluation of Dislocation Generation on Silicon Substrates by Selective OxidationJournal of the Electrochemical Society, 1983
- Evaluation of Dislocation Generation at Si3 N 4 Film Edges on Silicon Substrates by Selective OxidationJournal of the Electrochemical Society, 1981
- Generation Mechanism of Dislocations in Local Oxidation of SiliconJournal of the Electrochemical Society, 1980
- Influence of film stress and thermal oxidation on the generation of dislocations in siliconApplied Physics Letters, 1978
- Stacking faults in steam-oxidized siliconActa Metallurgica, 1966