On the influence of point defects in the LOCOS process
- 16 June 1987
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 101 (2) , 381-389
- https://doi.org/10.1002/pssa.2211010209
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Point defects, diffusion processes, and swirl defect formation in siliconApplied Physics A, 1985
- Kinetics of growth of the oxidation stacking faultsJournal of Applied Physics, 1979
- Influence of film stress and thermal oxidation on the generation of dislocations in siliconApplied Physics Letters, 1978
- Framed Recessed Oxide Scheme for Dislocation‐Free Planar Si StructuresJournal of the Electrochemical Society, 1978
- Role of point defects in the growth of the oxidation-induced stacking faults in siliconPhysical Review B, 1977
- Dislocation propagation and emitter edge defects in silicon wafersJournal of Applied Physics, 1976
- Formation of Silicon Nitride at a Si ‐ SiO2 Interface during Local Oxidation of Silicon and during Heat‐Treatment of Oxidized Silicon in NH 3 GasJournal of the Electrochemical Society, 1976
- Residual stress in silicon nitride filmsJournal of Electronic Materials, 1976
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974
- Generation of Dislocations Induced by Chemical Vapor Deposited Si3N4Films on SiliconJapanese Journal of Applied Physics, 1972