Recombination properties of dislocation slip planes
- 16 May 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 95 (1) , 173-177
- https://doi.org/10.1002/pssa.2210950121
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Demonstration of excitation-dependent grain-boundary recombination velocity in polycrystalline siliconJournal of Applied Physics, 1984
- The EBIC contrast of dislocation slip planes in siliconPhysica Status Solidi (a), 1984
- Theory of beam induced current characterization of grain boundaries in polycrystalline solar cellsJournal of Applied Physics, 1983
- On the real structure of monocrystalline silicon near dislocation slip planesPhysica Status Solidi (a), 1981
- An analytical model of SEM and STEM charge collection images of dislocations in thin semiconductor layers: I. Minority carrier generation, diffusion, and collectionPhysica Status Solidi (a), 1981