New Fabrication Technique of Quantum Wire Structures with Dimensions Precisely Controlled by the CBE Method
- 1 July 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (7A) , L1083
- https://doi.org/10.1143/jjap.28.l1083
Abstract
A quantum wire structure of GaAs with a line width of below 100 nm has been successfully grown by the chemical beam epitaxial technique using the cleaved face of a GaAs/AlAs multiquantum well (MQW) structure. Before GaAs growth, an ultrafine ridge pattern defined by the (001) MQW structure was made by the thermal etching method. GaAs layers grown on the patterned substrate exhibit a mesa-shaped structure, with sidewalls of (111)A and (1̄1̄1)B facets. This method for making quantum wires is compatible with currently available growth techniques, and is readily applicable to one-dimensional lasers etc.Keywords
This publication has 8 references indexed in Scilit:
- Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum ConfinementPhysical Review Letters, 1989
- Surface-superlattice effects in a grating-gate GaAs/GaAlAs modulation doped field-effect transistorApplied Physics Letters, 1988
- Observation of Aharonov-Bohm magnetoresistance oscillations in selectively doped GaAs-AlGaAs submicron structuresSolid State Communications, 1987
- Quantum transport in an electron-wave guidePhysical Review Letters, 1987
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Selective growth of GaAs in the MOMBE and MOCVD systemsJournal of Crystal Growth, 1986
- Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBEJapanese Journal of Applied Physics, 1986
- Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxyApplied Physics Letters, 1984