Light-Emitting nm-Size Silicon Using Electrochemical Anodization and Oxidation
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Contact Fill by Ionized Cluster BeamJapanese Journal of Applied Physics, 1992
- Rapid-thermal-oxidized porous Si−The superior photoluminescent SiApplied Physics Letters, 1992
- Comparing Effects of Vacuum Annealing and Dry Oxidationon the Photoluminescence of Porous SiJapanese Journal of Applied Physics, 1992
- Electroluminescence in the visible range during anodic oxidation of porous silicon filmsApplied Physics Letters, 1991
- Ultrathin Si films grown epitaxially on porous siliconApplied Surface Science, 1991
- Optical Properties of Microcrystalline Silicon in Oxide Matrix through Partial Oxidation of Anodized Porous SiliconMRS Proceedings, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Structural Change of Crystalline Porous Silicon with ChemisorptionJapanese Journal of Applied Physics, 1990
- Initial Oxidation Process of Anodized Porous Silicon with Hydrogen Atoms Chemisorbed on the Inner SurfaceJapanese Journal of Applied Physics, 1988