An Investigation of the Transient Ionizing Radiation Response of Diffused Resistors Using a Pulsed Laser
- 1 January 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 27 (5) , 1362-1367
- https://doi.org/10.1109/tns.1980.4331025
Abstract
The transient response of diffused resistors to high dose rate ionizing radiation has been experimentally investigated using a pulsed GaAs laser. The effects of bias, bias configuration, and meandered isolation on the transient response have been determined. It is shown that the transient response of a homogeneous resistor-tub structure is due to conductivity modulation, whereas the response of a heterogeneous structure is dominated by photocurrent generation. Further, the heterogeneous structure response is shown to be highly sensitive to bias and bias configuration, and that meandered isolation improves the transient response significantly at low-bias voltages.Keywords
This publication has 4 references indexed in Scilit:
- The Current Limiting Capability of Diffused ResistorsIEEE Transactions on Nuclear Science, 1979
- Use of a Pulsed Laser as an Aid to Transient Upset Testing of I2L LSI MicrocircuitsIEEE Transactions on Nuclear Science, 1978
- The effects of ionizing radiation on diffused resistorsIEEE Transactions on Nuclear Science, 1974
- The Use of Lasers to Simulate Radiation-Induced Transients in Semiconductor Devices and CircuitsIEEE Transactions on Nuclear Science, 1965