In situ FTIR and surface analysis of the reaction of trimethylgallium and ammonia
- 1 May 1989
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (3) , 369-377
- https://doi.org/10.1007/bf02657985
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- CVD growth of InGaAsProgress in Crystal Growth and Characterization, 1986
- GaAs growth in metal–organic MBEJournal of Vacuum Science & Technology B, 1985
- Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2Journal of the Electrochemical Society, 1985
- Ir Laser Assisted Grading Of Mocvd GaAspMRS Proceedings, 1985
- The Mechanism of High Temperature Combustion of Propane and ButaneCombustion Science and Technology, 1983
- Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation DependenceJournal of the Electrochemical Society, 1983
- On the Reaction Mechanism of GaAs MOCVDJournal of the Electrochemical Society, 1983
- Spectra and structure of gallium compounds. 4. Vibrational studies of ammonia-trimethylgallane and ammonia-d3-trimethylgallaneInorganic Chemistry, 1982
- Spectra and structure of gallium compounds: V—Infrared and Raman spectra of gaseous, liquid and solid trimethylgalliumJournal of Raman Spectroscopy, 1981
- THE PYROLYSIS OF TRIMETHYL GALLIUMCanadian Journal of Chemistry, 1963