Hydrostatic and uniaxial pressure coefficients of CdTe
- 15 October 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (11) , 7862-7865
- https://doi.org/10.1103/physrevb.38.7862
Abstract
The pressure dependence of direct band-gap CdTe has been measured by observing the direct exciton photoluminescence and donor-acceptor pair photoluminescence under hydrostatic pressures up to 35 kbar. A value of 6.5±0.2 meV was obtained corresponding to a hydrostatic deformation potential eV. Using this value, the uniaxial stress data of Thomas J. Appl. Phys. 32, 2298 (1961) is reassessed to determine a best value of meV , corresponding to eV and eV.
Keywords
This publication has 11 references indexed in Scilit:
- Optical spectroscopy at cryogenic temperatures using a Block–Piermarini diamond-anvil cellReview of Scientific Instruments, 1988
- Luminescence from quantized exciton-polariton states in Te/CdTe/Te thin-layer heterostructuresPhysical Review B, 1988
- Acoustic deformation potentials and heterostructure band offsets in semiconductorsPhysical Review B, 1987
- Pressure dependence of the lowest direct absorption edge of ZnTeSolid State Communications, 1987
- Diamond anvil cell and high-pressure physical investigationsReviews of Modern Physics, 1983
- Pressure dependence of energy gaps and refractive indices of tetrahedrally bonded semiconductorsPhysical Review B, 1974
- An Optical Fluorescence System for Quantitative Pressure Measurement in the Diamond-Anvil CellReview of Scientific Instruments, 1973
- Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical BondPhysical Review Letters, 1971
- Excitons and Band Splitting Produced by Uniaxial Stress in CdTeJournal of Applied Physics, 1961
- Deformation Potential in Germanium from Optical Absorption Lines for Exciton FormationPhysical Review Letters, 1959