Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy
- 25 July 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (4) , 291-292
- https://doi.org/10.1063/1.100594
Abstract
We report the molecular beam epitaxial growth of InAs0.22Sb0.78 on semi‐insulating GaAs substrates, and the fabrication and characterization of photoconductance detectors.Keywords
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