CW GaAs MITATT source on copper heatsink up to 160GHz
- 4 August 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (16) , 1316-1317
- https://doi.org/10.1049/el:19940891
Abstract
The performance of a GaAs pn-junction transit time device with mixed tunnel-avalanche breakdown is described. At 164 GHz a CW output power of 1 mW has been achieved in the fundamental mode with devices on copper heatsink. This is to date the highest frequency achieved with CW GaAs diodes. The corresponding noise measure is 28 dB at 160 GHz.Keywords
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