Direct Measurement of Surface Charging during Plasma Etching
- 1 July 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (7S)
- https://doi.org/10.1143/jjap.33.4446
Abstract
An on-wafer surface potential probe was developed for the direct real-time measurement of the local charging on a wafer surface during plasma etching. Pressure and rf power dependencies of the surface charging potential were measured in a nonuniform magnetron plasma by this probe. The variation in etching profiles was also observed by scanning electron microscopy (SEM). The measured surface charging potential was consistent with previously expected values from the profile distortion and device damage results. The local surface charging and the profile distortion increased as the pressure was reduced, while they were insensitive to the rf power change.Keywords
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