Model for oxide damage from gate charging during magnetron etching
- 29 March 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (13) , 1507-1509
- https://doi.org/10.1063/1.108673
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Magnetron etching of polysilicon: Electrical damageJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
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- Breakdown Yield and Lifetime of Thin Gate Oxides in CMOS ProcessingJournal of the Electrochemical Society, 1989